MC33565 Datasheet, PDF (5/8 Pages) ON Semiconductor – 200 mA INTELLIGENT LDO REGULATOR WITH SMART BYPASS CONTROL

VIN
3.8V
4.4V
VTH(HI)
DR
2.0V
VTH(LO)
MC33565
VHYST
VIN
3.8V
2.0V
DR
4.4V
tDH
2.0V
tDL
2.0V
NOTE:
(1) VIN rise and fall times (10% to 90%) to be ≥ 100µs.
Figure 3. 5V Detect Thresholds Diagram
NOTE:
(1) VIN rise and fall times (10% to 90%) to be ≤ 100ns.
Figure 4. Timing Diagram
200
W ^{Vout capacitor 5µF}
20m ESR
200
W ^{Vout capacitor 5µF}
20m ESR
Phase Margin °
100
Gain dB
Phase Margin °
100
Gain dB
0
101
103
105
Frequency (Hz)
W ^{NOTE: Vout capacitor ≥ 4.7µF over operating temperature range.}
Maximum ESR permissable = 500m over operating temperature range.
Figure 5. Predicted Gain and Phase
at Zero Load Current
0
101
103
105
Frequency (Hz)
Figure 6. Predicted Gain and Phase
at Full Load Current
MOTOROLA ANALOG IC DEVICE DATA
5