MBT35200MT1_05 Datasheet, PDF (5/6 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

MBT35200MT1
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE P
D
65 4
H_E
E
12 3
b
e
0.05 (0.002)
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
q
c
L
MILLIMETERS
DIM MIN NOM MAX
A 0.90
1.00
1.10
A1 0.01
0.06
0.10
b 0.25
0.38
0.50
c
0.10
0.18
0.26
D 2.90
3.00
3.10
E 1.30
1.50
1.70
e
0.85
0.95
1.05
L 0.20
0.40
0.60
H E 2.50
2.75
3.00
q
0°
−
10°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ Ǔ _{SCALE 10:1}
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5