MBT35200MT1_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

MBT35200MT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
V_(BR)CEO
Collector −Base Breakdown Voltage
(I_C = −0.1 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = −0.1 mAdc, I_C = 0)
V_(BR)CBO
V_(BR)EBO
Collector Cutoff Current
(V_CB = −35 Vdc, I_E = 0)
I_CBO
Collector−Emitter Cutoff Current
(V_CES = −35 Vdc)
I_CES
Emitter Cutoff Current
(V_EB = −4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain ⁽¹⁾
(I_C = −1.0 A, V_CE = −1.5 V)
(I_C = −1.5 A, V_CE = −1.5 V)
(I_C = −2.0 A, V_CE = −3.0 V)
Collector −Emitter Saturation Voltage (Note 1.)
(I_C = −0.8 A, I_B = −0.008 A)
(I_C = −1.2 A, I_B = −0.012 A)
(I_C = −2.0 A, I_B = −0.02 A)
Base −Emitter Saturation Voltage (Note 1.)
(I_C = −1.2 A, I_B = −0.012 A)
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
Base −Emitter Turn−on Voltage (Note 1.)
(I_C = −2.0 A, V_CE = −3.0 V)
V_BE(on)
Cutoff Frequency
(I_C = −100 mA, V_CE = −5.0 V, f = 100 MHz)
Input Capacitance (V_EB = −0.5 V, f = 1.0 MHz)
Output Capacitance (V_CB = −3.0 V, f = 1.0 MHz)
Turn−on Time (V_CC = −10 V, I_B1 = −100 mA, I_C = −1 A, R_L = 3 W)
Turn−off Time (V_CC = −10 V, I_B1 = I_B2 = −100 mA, I_C = 1 A, R_L = 3 W)
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
f_T
Cibo
Cobo
t_on
t_off
Min
−35
−55
−5.0
−
−
−
100
100
100
−
−
−
−
−
100
−
−
−
−
Typical
Max
Unit
−45
−65
−7.0
−0.03
−0.03
−0.01
Vdc
−
Vdc
−
Vdc
−
mAdc
−0.1
mAdc
−0.1
mAdc
−0.1
200
200
200
−0.125
−0.175
−0.260
−0.68
−0.81
−
600
85
35
225
−
400
−
−0.15
−0.20
−0.31
−0.85
−0.875
−
650
100
−
−
V
V
V
MHz
pF
pF
nS
nS
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