DTA114EM3T5G Datasheet, PDF (5/12 Pages) ON Semiconductor – Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

1
I_C/I_B = 10
0.1
DTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G
1000
T_A = −25°C
100
25°C
75°C
V_CE = 10 V
T_A = 75°C
25°C
−25°C
0.01
0
10
20
40
50
1
I_C, COLLECTOR CURRENT (mA)
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) versus I_C
Figure 3. DC Current Gain
4
100
75°C
25°C
f = 1 MHz
3
l_E = 0 V
T_A = 25°C
10
T_A = −25°C
1
2
0.1
1
0.01
V_O = 5 V
0
0
10
20
30
40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_in, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V_O = 0.2 V
10
1
T_A = −25°C
25°C
75°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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