CSPEMI202AG Datasheet, PDF (5/9 Pages) ON Semiconductor – 2 Channel Headset Microphone EMI Filter with ESD Protection

CSPEMI202AG
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL PARAMETER
R₁
Resistance
C
Capacitance
1
I
Diode Leakage Current
LEAK
V_SIG
Signal Voltage
Positive Clamp
Negative Clamp
CONDITIONS
V =5.0V
IN
I_LOAD = 10mA
V
In-system ESD Withstand Voltage
ESD
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
V_CL
Clamping Voltage during ESD Discharge Notes 2 and 3
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
f_C
Cut-off frequency
Z
SOURCE
=
50Ω,
Z
LOAD
=
50Ω
R = 68Ω, C = 47pF
MIN TYP
61 68
38 47
MAX
75
56
1.0
UNITS
Ω
pF
μA
5
7
15
V
-15 -10
-5
V
±15
kV
±8
kV
+15
V
-19
V
60
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Rev. 3 | Page 5 of 9 | www.onsemi.com