BTB16-600CW3G Datasheet, PDF (5/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

BTB16-600CW3G, BTB16-800CW3G
100
Q3
Q1
10
Q2
1.6
V_D = 12 V
R_L = 30 W
1.4
1.2
V_D = 12 V
R_L = 30 W
Q1
1
Q3
0.8
0.6
Q2
1
-40 -25 -10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current Variation
0.4
-40 -25 -10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage Variation
5000
100
V_D = 800 Vpk
4K
T_J = 125°C
3K
2K
1K
0
10
100
1000
10000
R_G, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off‐State Voltage
(Exponential Waveform)
T_J = 125°C
10
100°C
75°C
I_TM
t_w
V_DRM
1
f=
2 t_w
(di/dt)_c
=
6f I_TM
1000
1
10 20 30 40 50 60 70 80 90 100
(di/dt)_c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
Commutating Voltage
200 V_RMS
ADJUST FOR
I_TM, 60 Hz V_AC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
C_L
L_L
MEASURE
I
MT2
1N914 _{51 W}
MT1
G
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)_c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)_c
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