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| BTB16-600CW3G Datasheet, PDF (2/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors | |||
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BTB16-600CW3G, BTB16-800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8â³ from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
2.1
60
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM/
TJ = 25°C
IRRM
-
-
TJ = 125°C
-
-
ON CHARACTERISTICS
Peak OnâState Voltage (Note 2)
(ITM = 局22.5 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VTM
-
-
IGT
2.0
-
2.0
-
2.0
-
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA)
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IH
-
-
IL
-
-
-
-
-
-
Gate Trigger Voltage (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
0.5
-
0.5
-
0.5
-
Gate Non-Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGD
0.2
-
0.2
-
0.2
-
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ⤠100 ns)
Critical Rate of Rise of OffâState Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ⤠2.0 ms, Duty Cycle ⤠2%.
(dI/dt)c
6.0
-
dI/dt
-
-
dV/dt
1000
-
Max Unit
mA
0.005
2.0
1.55
V
mA
35
35
35
50
mA
mA
60
65
60
V
1.7
1.1
1.1
V
-
-
-
-
A/ms
50
A/ms
-
V/ms
http://onsemi.com
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