BTA12-600BW3G Datasheet, PDF (5/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

BTA12−600BW3G, BTA12−800BW3G
100
Q3
Q1
Q2
10
V_D = 12 V
R_L = 30 W
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
2.0
1.8
V_D = 12 V
R_L = 30 W
1.6
Q1
1.4
1.2
1.0
Q3
0.8
0.6
Q2
0.4
−40 −25 −10 5 20 35 50 65 80 95
T_J, JUNCTION TEMPERATURE (°C)
110 125
Figure 7. Gate Trigger Voltage Variation
5k
V_D = 800 Vpk
4k
T_J = 125°C
3k
2k
1k
0
10
100
1000
10000
R_G, GATE TO MAIN TERMINAL 1 RESISTANCE (W)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
120
100
Q2
80
V_D = 12 V
R_L = 30 W
60
Q1
40
20
Q3
0
−40 −25 −10 5 20 35 50 65 80 95 110 125
T_J, JUNCTION TEMPERATURE (°C)
Figure 10. Latching Current Variation
200 V_RMS
ADJUST FOR
I_TM, 60 Hz V_AC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
C_L
L_L
MEASURE
I
MT2
1N914 _{51 W}
MT1
G
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)_c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)_c
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