BTA12-600BW3G Datasheet, PDF (2/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

BTA12−600BW3G, BTA12−800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
R_qJC
R_qJA
T_L
Value
2.5
60
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V_D = Rated V_DRM, V_RRM; Gate Open)
ON CHARACTERISTICS
I_DRM,
T_J = 25°C
I_RRM
−
−
T_J = 125°C
−
−
Peak On-State Voltage (Note 2)
(I_TM = ± 17 A Peak)
Gate Trigger Current (Continuous dc) (V_D = 12 V, R_L = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V_TM
−
−
I_GT
2.5
−
2.5
−
2.5
−
Holding Current
(V_D = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (V_D = 12 V, I_G = 60 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
I_H
−
−
I_L
−
−
−
−
−
−
Gate Trigger Voltage (V_D = 12 V, R_L = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V_GT
0.5
−
0.5
−
0.5
−
Gate Non−Trigger Voltage (T_J = 125°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V_GD
0.2
−
0.2
−
0.2
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T_J = 125°C, No Snubber)
Critical Rate of Rise of On−State Current
(T_J = 125°C, f = 120 Hz, I_G = 2 x I_GT, tr ≤ 100 ns)
Critical Rate of Rise of Off-State Voltage
(V_D = 0.66 x V_DRM, Exponential Waveform, Gate Open, T_J = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
(dI/dt)_c
2.5
−
dI/dt
−
−
dV/dt
2000
−
Max Unit
mA
0.005
2.0
1.55
V
mA
50
50
50
50
mA
mA
70
80
70
V
1.7
1.1
1.1
V
−
−
−
−
A/ms
50
A/ms
−
V/ms
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