2N6052 Datasheet, PDF (5/8 Pages) ON Semiconductor – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6052
PNP
2N6052
20,000
10,000
5000
T_J = 150°C
3000
25°C
2000
1000 -ā55°C
V_CE = 3.0 V
NPN
2N6058, 2N6059
40,000
20,000
T_J = 150°C
10,000
6,000
25°C
4,000
2,000
V_CE = 3.0 V
500
1,000
-ā55°C
300
600
200
400
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.0
T_J = 25°C
2.6
I_C = 3.0 A
6.0 A
9.0 A
2.2
3.0
T_J = 25°C
2.6 I_C = 3.0 A
6.0 A
12 A
2.2
9.0 A
12 A
1.8
1.8
1.4
1.4
1.0
0.5
1.0
1.0
2.0 3.0 5.0
10
20 30 50
0.5
1.0
2.0 3.0 5.0
10
I_B, BASE CURRENT (mA)
I_B, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
20 30 50
3.0
T_J = 25°C
2.5
3.0
T_J = 25°C
2.5
2.0
2.0
1.5
V_BE(sat) @ I_C/I_B = 250
1.5 ^VBE(sat) ^{@ I}C^/IB ^{= 250}
V_BE @ V_CE = 3.0 V
1.0
V_BE @ V_CE = 3.0 V
1.0
V_CE(sat) @ I_C/I_B = 250
0.5
0.2 0.3 0.5
1.0
2.0 3.0
5.0 10
20
V_CE(sat) @ I_C/I_B = 250
0.5
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
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