2N6052 Datasheet, PDF (3/8 Pages) ON Semiconductor – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

2N6052
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 _0.05
0.07
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE
PULSE
0.02 0.03 0.05 0.1
R_θJC(t) = r(t) R_θJC
P_(pk)
R_θJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) θ_JC(t)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5 1.0
2.0 3.0 5.0 10
t, TIME (ms)
20 30 50
Figure 4. Thermal Response
100 200 300 500 1000
ACTIVE–REGION SAFE OPERATING AREA
50
0.1 ms
20
10
5.0
0.5 ms
1.0 ms
2.0
5.0 ms
1.0 _{TJ = 200°C}
0.5
SECOND BREAKDOWN LIMĆ
ITED
0.2
BONDING WIRE LIMITED
THERMAL LIMITATION
d
0.1
@T_C = 25°C (SINGLE PULSE)
c
0.05
10
20
30
50
70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6058
50
0.1 ms
20
10
5.0
0.5 ms
1.0 ms
2.0
5.0 ms
1.0 _{TJ = 200°C}
0.5
0.2
0.1
0.05
10
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@T_C = 25°C (SINGLE PULSE)
20
30
50
d
c
70 100
V_CE, COLLECTOR-EMITTER VOLTAGE
(VOLTS)
Figure 6. 2N6052, 2N6059
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C – V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5, 6, and 7 is based on T_J(pk) = 200_C;
T_C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
v 200_C; T_J(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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