2N6035_06 Datasheet, PDF (5/6 Pages) ON Semiconductor – Plastic Darlington Complementary Silicon Power Transistors

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
3.4
3.0
I_C =
2.6 ^{0.5 A}
1.0 A
2.0 A
2.2
T_J = 25°C
4.0 A
3.4
3.0 _{IC =}
0.5 A
2.6
1.0 A 2.0 A
4.0 A
2.2
T_J = 25°C
1.8
1.8
1.4
1.4
1.0
1.0
0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 51000
0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
I_B, BASE CURRENT (mA)
I_B, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
T_J = 25°C
1.8
1.4 ^{VBE(sat) @ IC/IB = 250}
1.0
V_CE(sat) @ I_C/I_B = 250
0.6
V_BE @ V_CE = 3.0 V
2.2
T_J = 25°C
1.8
1.4 ^{VBE(sat) @ IC/IB = 250}
1.0
V_CE(sat) @ I_C/I_B = 250
0.6
V_BE @ V_CE = 3.0 V
0.2
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0 4.0
0.2
0.04 0.06 0.1
0.2
0.4 0.6 1.0 2.0
4.0
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
ORDERING INFORMATION
2N6034
2N6034G
Device
2N6035
2N6035G
2N6036
2N6036G
2N6038
2N6038G
2N6039
2N6039G
Package
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
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