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2N6035_06 Datasheet, PDF (2/6 Pages) ON Semiconductor – Plastic Darlington Complementary Silicon Power Transistors
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
Collector−Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
Collector−Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
2N6034
2N6035, 2N6038
2N6036, 2N6039
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 40 mAdc)
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
*Indicates JEDEC Registered Data.
2N6034, 2N6035, 2N6036
2N6038, 2N6039
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
|hfe|
Cob
Min
Max
Unit
Vdc
40
−
60
−
80
−
mA
−
100
−
100
−
100
mA
−
100
−
100
−
100
−
500
−
500
−
500
mAdc
−
0.5
−
0.5
−
0.5
−
2.0 mAdc
−
500
−
750 15,000
100
−
Vdc
−
2.0
−
3.0
−
4.0
Vdc
−
2.8
Vdc
25
−
−
pF
−
200
−
100
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