2N4401_07 Datasheet, PDF (5/7 Pages) ON Semiconductor – General Purpose Transistors NPN Silicon

2N4401
h PARAMETERS
V_CE = 10 Vdc, f = 1.0 kHz, T_A = 25°C
This group of graphs illustrates the relationship between
h_fe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
300
200
100
70
50
30
20
0.1
2N4401 UNIT 1
2N4401 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Current Gain
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
0.1
2N4401 UNIT 1
2N4401 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
10
7.0
5.0
2N4401 UNIT 1
3.0
2N4401 UNIT 2
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 13. Voltage Feedback Ratio
100
50
20
10
5.0
2.0
1.0
0.1
2N4401 UNIT 1
2N4401 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 14. Output Admittance
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