2N4401_07 Datasheet, PDF (4/7 Pages) ON Semiconductor – General Purpose Transistors NPN Silicon

300
200
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70
50
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10
2N4401
100
t_s′ = t_s − 1/8 t_f
I_B1 = I_B2
70
I_C/I_B = 10 to 20
50
30
20
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
10
7.0
5.0
10
I_C/I_B = 20
V_CC = 30 V
I_B1 = I_B2
I_C/I_B = 10
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
V_CE = 10 Vdc, T_A = 25°C; Bandwidth = 1.0 Hz
10
10
I_C = 1.0 mA, R_S = 150 W
f = 1.0 kHz
8.0
I_C = 500 mA, R_S = 200 W
I_C = 100 mA, R_S = 2.0 kW
R_S = OPTIMUM
RS = SOURCE
8.0
I_C = 50 mA, R_S = 4.0 kW
RS = RESISTANCE
I_C = 50 mA
I_C = 100 mA
6.0
6.0
I_C = 500 mA
I_C = 1.0 mA
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 9. Frequency Effects
50 100
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
Figure 10. Source Resistance Effects
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