2N3055A_06 Datasheet, PDF (5/6 Pages) ON Semiconductor – Complementary Silicon High-Power Transistors

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
NPN
10,000
1000
V_CE = 30 V
COLLECTOR CUT−OFF REGION
PNP
1000
V_CE = 30 V
100
100
T_J = 150°C
10
100°C
1.0
I_C = I_CES
0.1 ^REVERSE
FORWARD
0.01
+0.2
25°C
+0.1
0
−0.1 −0.2 −0.3 −0.4 −0.5
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015
20
30 ms
10
100 ms
1 ms
5
BONDING WIRE LIMIT
100 ms
2
THERMAL LIMIT @ T_C = 25°C
dc
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1
10
20
60
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
2N3055A
10 T_J = 150°C
1.0
100°C
0.1
REVERSE
0.01
25°C
I_C = I_CES
FORWARD
0.001
−0.2
20
10
−0.1
0
+0.1 +0.2 +0.3 +0.4 +0.5
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. MJ15016
0.1 ms
5.0
1.0 ms
2.0
1.0
0.5
0.2
15
BONDING WIRE LIMIT
THERMAL LIMIT @ T_C = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
20
30
60
100 120
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on T_C = 25_C;
T_J(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device
2N3055A
2N3055AG
MJ15015
MJ15015G
MJ15016
MJ15016G
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
Shipping
100 Units / Tray
100 Units / Tray
http://onsemi.com
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