2N3055A_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon High-Power Transistors

2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
• Current−Gain − Bandwidth−Product @ I_C = 1.0 Adc
f_T = 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
• Safe Operating Area − Rated to 60 V and 120 V, Respectively
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N3055A
MJ15015, MJ15016
Collector−Base Voltage
2N3055A
MJ15015, MJ15016
Collector−Emitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ T_C = 25_C
Derate above 25_C
2N3055A
Symbol
V_CEO
V_CBO
V_CEV
V_EBO
I_C
I_B
P_D
Value
60
120
100
200
100
200
7.0
15
7.0
115
0.65
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Total Device Dissipation @ T_C = 25_C
180
Derate above 25_C
1.03
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
T_J, T_stg −65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Max Unit
Thermal Resistance, Junction−to−Case
R_qJC 1.52 0.98 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 6
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N3055A/D