TIP31G Datasheet, PDF (4/7 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 _0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 1.0 0.2
Z_qJC(t) = r(t) R_qJC
R_qJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) Z_qJC(t)
0.5 1.0 2.0
5.0 10 20
50
t, TIME (ms)
Figure 4. Thermal Response
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
100 200
500 1.0 k
10
5.0
100 ms
5.0 ms
2.0
1.0 ms
1.0
SECONDARY BREAKDOWN
LIMITED @ T_J ≤ 150°C
0.5
THERMAL LIMIT @ T_C = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
0.2 CURVES APPLY
TIP31A, TIP32A
BELOW RATED V_CEO
0.1
TIP31B, TIP32B
TIP31C, TIP32C
5.0
10
20
50
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150°C. T_J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
3.0
2.0
t_s′
1.0
t_f @ V_CC = 30 V
0.7
0.5
0.3 t_f @ V_CC = 10 V
0.2
I_B1 = I_B2
I_C/I_B = 10
t_s′ = t_s - 1/8 t_f
T_J = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
2.0 3.0
300
T_J = + 25°C
200
100
C_eb
70
50
C_cb
30
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
www.onsemi.com
4