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TIP31G Datasheet, PDF (2/7 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors
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TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO(sus)
Vdc
40
−
60
−
80
−
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP31G, TIP32G, TIP31AG, TIP32AG
(VCE = 60 Vdc, IB = 0)
TIP31BG, TIP31CG, TIP32BG, TIP32CG
ICEO
−
−
mAdc
0.3
0.3
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP31G, TIP32G
(VCE = 60 Vdc, VEB = 0)
TIP31AG, TIP32AG
(VCE = 80 Vdc, VEB = 0)
TIP31BG, TIP32BG
(VCE = 100 Vdc, VEB = 0)
TIP31CG, TIP32CG
ICES
mAdc
−
200
−
200
−
200
−
200
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
IEBO
−
mAdc
1.0
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 375 mAdc)
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
25
10
VCE(sat)
−
VBE(on)
−
−
−
50
Vdc
1.2
Vdc
1.8
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
MHz
3.0
−
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
−
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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