TIP29 Datasheet, PDF (4/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
500
300
T_J = 150°C
25°C
100
70
- 55°C
50
30
V_CE = 2.0 V
10
7.0
5.0
0.03 0.05 0.07 0.1
0.3 0.5 0.7 1.0
3.0
I_C, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
3.0
2.0
t_s′
1.0
0.7
t_f @ V_CC = 30 V
0.5
0.3 t_f @ V_CC = 10 V
0.2
I_B1 = I_B2
I_C/I_B = 10
t_s′ = t_s - 1/8 t_f
T_J = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I_C, COLLECTOR CURRENT (AMP)
Figure 3. Turn−Off Time
2.0 3.0
TURN-ON PULSE
APPROX
V_CC
+11 V
R_C
V_in 0
V_EB(off)
APPROX
+11 V
V_in
V_in
R_B
t₁
t₃
C_jd << C_eb
t₁ ≤ 7.0 ns
100 < t₂ < 500 ms
t₃ < 15 ns
- 4.0 V
SCOPE
t₂
TURN-OFF PULSE
DUTY CYCLE ≈ 2.0%
APPROX - 9.0 V
R_B and R_C VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
Figure 4. Switching Time Equivalent Circuit
2.0
1.0
0.7
t_r @ V_CC = 30 V
0.5
0.3
t_r @ V_CC = 10 V
I_C/I_B = 10
T_J = 25°C
0.1
0.07
t_d @ V_EB(off) = 2.0 V
0.05
0.03
0.02
0.03 0.05 0.07 0.1
0.3 0.5 0.7 1.0
3.0
I_C, COLLECTOR CURRENT (AMP)
Figure 5. Turn−On Time
10
T_J = 150°C
3.0
1 ms
dc
0.1
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T_C = 25°C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED V_CEO
0.1
1.0
4.0
10
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
20
40
V_CE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
5 ms
100
Figure 6. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
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