TIP29 Datasheet, PDF(3/5 Page) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

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TIP29 Datasheet, PDF (3/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

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TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)

VCEO(sus)

Vdc

TIP29, TIP30

TIP29A, TIP30A

TIP29B, TIP30B

TIP29C, TIP30C

100

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)

(VCE = 60 Vdc, VEB = 0)

(VCE = 80 Vdc, VEB = 0)

(VCE = 100 Vdc, VEB = 0)

TIP29, TIP29A, TIP30, TIP30A

TIP29B, TIP29C, TIP30B, TIP30C

TIP29, TIP30

TIP29A, TIP30A

TIP29B, TIP30B

TIP29C, TIP30C

ICEO

ICES

mAdc

0.3

mAdc

200

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

CollectorâEmitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

BaseâEmitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

CurrentâGain â Bandwidth Product (Note 3)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

SmallâSignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%

3. fT = âªhfeâªâ¢ ftest

IEBO

1.0

mAdc

hFE

VCE(sat)

0.7

Vdc

VBE(on)

1.3

Vdc

3.0

MHz

hfe

http://onsemi.com

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