PZT751T1 Datasheet, PDF (4/6 Pages) Motorola, Inc – SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT

PZT751T1
NPN
1.0
0.9
0.8
T_J = 25°C
0.7
0.6
0.5
0.4
0.3
I_C = 10 mA I_C = 100 mA I_C = 500 mA
I_C = 2.0 A
0.2
0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
I_B, BASE CURRENT (mA)
50 100 200 500
Figure 5. Collector Saturation Region
PNP
−1.0
−0.9
−0.8
T_J = 25°C
−0.7
−0.6
−0.5
−0.4
−0.3
I_C = −500 mA
I_C = −2.0 A
−0.2
−0.1
I_C = −10 mA I_C = −100 mA
0
−0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I_B, BASE CURRENT (mA)
−50 −100 −200 −500
Figure 6. Collector Saturation Region
NPN
10
4.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1.0
T_A = 25°C
1.0 ms
MPS65
0
MPS65
1
T_C = 25°C
100 ms
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
5.0
10
20
50
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Safe Operating Area
PNP
−10
−4.0
−2.0
−1.0
−0.5
−0.2
T_A = 25°C
−0.1
1.0 ms
MPS75
MP0S75
1
T_C = 25°C
100 ms
−0.05
−0.02
−0.01
−1.0
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−2.0
−5.0 −10 −20
−50 −100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. Safe Operating Area
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