PZT751T1 Datasheet, PDF (3/6 Pages) Motorola, Inc – SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT

PZT751T1
300
270
240 ^{TJ = 125°C}
NPN
V_CE = 2.0 V
210
180
25°C
150
120
−55 °C
90
60
30
0
10 20
50 100 200 500 1.0 A 2.0 A 4.0 A
I_C, COLLECTOR CURRENT (mA)
Figure 1. Typical DC Current Gain
250
225
T_J = 125°C
200
PNP
V_CE = −2.0 V
175
25°C
150
125
100
−55 °C
75
50
25
0
−10 −20
−50 −100 −200 −500 −1.0 A −2.0 A −4.0 A
I_C, COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
NPN
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 2.0 V
V_CE(sat) @ I_C/I_B = 10
100 200
500 1.0 A
I_C, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
2.0 A 4.0 A
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
−50
PNP
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 2.0 V
V_CE(sat) @ I_C/I_B = 10
−100 −200
−500 −1.0 A
I_C, COLLECTOR CURRENT (mA)
Figure 4. On Voltages
−2.0 A −4.0 A
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