NVMFS5826NLT1G Datasheet, PDF (4/6 Pages) ON Semiconductor – Power MOSFET 60 V, 24 m, 26 A, Single N−Channel

NVMFS5826NL
TYPICAL CHARACTERISTICS
1200
1000
C_iss
800
V_GS = 0 V
T_J = 25°C
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
t_r
t_f
t_d(off)
10
t_d(on)
1.0
1
V_DD = 48 V
V_GS = 4.5 V
I_D = 10 A
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
V_GS = 10 V
Single Pulse
T_C = 25°C
10 ms
100 ms
1 ms
10 ms
10
10
Q_T
8
6
4 ^Qgs
Q_gd
2
V_DS = 48 A
I_D = 10 A
0
T_J = 25°C
0 2 4 6 8 10 12 14 16 18
Q_g, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
60
V_GS = 0 V
50 ^{TJ = 25°C}
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1.0
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
20
I_D = 20 A
15
10
1
R_DS(on) Limit
dc
Thermal Limit
Package Limit
0.1
0.1
1
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
0
25
50
75
100
125 150 175
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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