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NVMFS5826NLT1G Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 60 V, 24 m, 26 A, Single N−Channel | |||
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NVMFS5826NL
Power MOSFET
60 V, 24 mW, 26 A, Single NâChannel
Features
⢠Small Footprint (5x6 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low QG and Capacitance to Minimize Driver Losses
⢠NVMFS5826NLWF â Wettable Flanks Product
⢠AECâQ101 Qualified and PPAP Capable
⢠These are PbâFree Devices and RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
60
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
26
A
19
39
W
19
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 3,
4)
Steady
TA = 100°C
Power Dissipation
RqJA (Notes 1 & 3)
State TA = 25°C
PD
TA = 100°C
8.0
A
6.0
3.6
W
1.8
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
130
A
Operating Junction and Storage Temperature
TJ, Tstg â 55 to °C
+ 175
Source Current (Body Diode)
IS
32
A
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 20 A, L = 0.1 mH, RG = 25 W)
EAS
20
mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Notes 2, 3)
RYJâmb
3.9 °C/W
JunctionâtoâAmbient â Steady State (Note 3) RqJA
42
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
24 mW @ 10 V
32 mW @ 4.5 V
ID MAX
26 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
DFN5
(SOâ8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S XXXXXX
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 â Rev. 3
Publication Order Number:
NVMFS5826NL/D
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