NVMFD5873NL_14 Datasheet, PDF (4/6 Pages) ON Semiconductor – Power MOSFET

NVMFD5873NL
TYPICAL CHARACTERISTICS
2000
C_iss
1500
V_GS = 0 V
T_J = 25°C
1000
500
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
100
V_DS = 48 V
I_D = 15 A
V_GS = 10 V
t_d(off)
10
t_f
t_r
t_d(on)
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10
Q_T
8
6
4 Q_gs
Q_gd
2
T_J = 25°C
V_DS = 48 V
I_D = 15 A
0
0
5
10
15
20
25
30 35
Q_g, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
80
V_GS = 0 V
70 _{TJ = 25°C}
60
50
40
30
20
10
0
0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
0.01 ms
10
0.1 ms
1
NVMFD5873NL
FBSOA
T_A = 25°C, 650 mm²,
2 oz Cu Pad, V_GS = 10 V
0.1
0.1
1
10
1 ms
10 ms
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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