NTZD5110NT5G Datasheet, PDF (4/5 Pages) ON Semiconductor – Small Signal MOSFET

NTZD5110N
TYPICAL CHARACTERISTICS
30
C_iss
5
T_J = 25°C
4
I_D = 0.2 A
20
C_oss
10
3
T_J = 25°C
V_GS = 0 V
2
C_rss
0
0
4
8
12
16
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1
0
0
0.2
0.4
0.6
0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
V_GS = 0 V
1
T_J = 85°C
T_J = 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
V_SD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Package
Shipping
NTZD5110NT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
NTZD5110NT5G
SOT−563
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
http://onsemi.com
4