NTZD5110NT5G Datasheet, PDF (1/5 Pages) ON Semiconductor – Small Signal MOSFET

NTZD5110N
Small Signal MOSFET
60 V, 310 mA, Dual N−Channel
with ESD Protection, SOT−563
Features
• Low R_DS(on) Improving System Efficiency
• Low Threshold Voltage
• ESD Protected Gate
• Small Footprint 1.6 x 1.6 mm
• These are Pb−Free Devices
Applications
• Load/Power Switches
• Driver Circuits: Relays, Lamps, Displays, Memories, etc.
• Battery Management/Battery Operated Systems
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted.)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady ^{TA = 25°C}
State _{TA = 85°C}
Steady State
V_DSS
V_GS
I_D
P_D
60
V
±20
V
294 mA
212
250 mW
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
T_A = 25°C
I_D
tv5 s
T_A = 85°C
tv5s
P_D
310 mA
225
280 mW
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
590 mA
−55 to °C
150
350 mA
260 °C
Gate−Source ESD Rating (HBM, Method 3015) ESD 1800 V
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
Symbol
R_qJA
Max
500
447
Unit
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V_(BR)DSS
60
R_DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
I_D Max
310 mA
D1
D2
G1
G2
N−Channel
S1
MOSFET
S2
6
1
SOT−563
CASE 463A
MARKING
DIAGRAM
S7MG
G
S7 = Specific Device Code
M = Date Code
(Note: Microdot may be in either location)
PINOUT: SOT−563
S₁ 1
6 D₁
G₁ 2
5 G₂
D₂ 3
Top View
4 S₂
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 6
Publication Order Number:
NTZD5110N/D