NTS4001N Datasheet, PDF (4/6 Pages) ON Semiconductor – Small Signal MOSFET

NTS4001N
TYPICAL PERFORMANCE CURVES (T_J = 25°C unless otherwise noted)
50
V_DS = 0 V
40 ^Ciss
V_GS = 0 V
T_J = 25°C
30 C_rss
20
10
0
10
5
0
5
V_GS V_DS
10 15
C_iss
C_oss
C_rss
20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
5
Q_G
4
3
Q_GS
2
Q_GD
1
I_D = 0.1 A
T_J = 25°C
0
0
0.2
0.4
0.6
0.8
1
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
0.1
0.08
V_GS = 0 V
T_J = 25°C
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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4