NTS4001N Datasheet, PDF (1/6 Pages) ON Semiconductor – Small Signal MOSFET

NTS4001N
Small Signal MOSFET
30 V, 270 mA, Single N−Channel, SC−70
Features
• Low Gate Charge for Fast Switching
• Small Footprint − 30% Smaller than TSOP−6
• ESD Protected Gate
• Pb−Free Package for Green Manufacturing (G Suffix)
Applications
• Low Side Load Switch
• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
• Buck Converters
• Level Shifts
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady T_A = 25 °C
State
T_A = 85 °C
Steady T_A = 25 °C
State
V_DSS
V_GS
I_D
P_D
30
V
±20
V
270 mA
200
330 mW
Pulsed Drain Current
t =10 µs
I_DM
200 mA
Operating Junction and Storage Temperature T_J, T_STG −55 to _°C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
270 mA
T_L
260
°C
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
I_D Max
270 mA
SC−70
SOT−323 (3 LEADS)
Gate 1
3 Drain
Source 2
Top View
MARKING DIAGRAM
3
1
2
SC−70 / SOT−323
CASE 419
STYLE 8
TDW
TD = Device Code
W = Work Week
PIN ASSIGNMENT
Gate
Source
1
3
2
Top View
Drain
ORDERING INFORMATION
Device
Package
Shipping
NTS4001NT1
SC−70 3000 Units/Reel
NTS4001NT1G
SC−70
3000 Units/Reel
(Pb−Free)
© Semiconductor Components Industries, LLC, 2003
1
September, 2003 − Rev. 1
Publication Order Number:
NTS4001N/D