NTR1P02LT1_06 Datasheet, PDF (4/5 Pages) ON Semiconductor – Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package

NTR1P02LT1
5000
4500
4000
V_DS = 0V
V_GS = 0V
T_J = 25°C
3500
3000
2500
C_iss
2000
1500
1000
500
C_oss
C_rss
0
15 10 5
0
5 10 15 20 25
−V_GS
−V_DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
6
28
24
Q_T
4
20
Q₁
2
0
0
16
Q₂
12
8
V_DS = −16 V
I_D = −1.5 A
4
T_J = 25°C
0
1
2
3
4
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
V_DD = −16 V
I_D = −1 A
t_r
t_f
10
t_d(off)
t_d(on)
0.8
V_GS = 0 V
T_J = 25°C
0.6
0.4
0.2
1
1
10
100
R_G, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
1.00E−01 3.00E−01 5.00E−01 7.00E−01 9.00E−01
−V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
http://onsemi.com
4