NTD5802N_14 Datasheet, PDF (4/7 Pages) ON Semiconductor – Power MOSFET

NTD5802N, NVD5802N
TYPICAL PERFORMANCE CHARACTERISTICS
200
10 V 6 V
180
7V
160
140
120
V_GS = 5 V
T_J = 25°C
4.5 V
200
V_DS ≥ 10 V
150
100
100
T_J = 25°C
80
4.2 V
60
4V
40
3.8 V
20
3.6 V
0
0
1
2
3
4
5
6
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
50
T_J = 100°C
T_J = −55°C
0
2
3
4
5
6
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.010
V_GS = 10 V
0.008
0.006
T_J = 150°C
0.004
T_J = 25°C
T_J = −55°C
0.002
10 30 50 70 90 110 130 150 170 190
I_D, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
0.015
0.014 T_J = 25°C
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
30 50 70
V_GS = 5 V
V_GS = 10 V
90 110 130 150 170 190
I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6 ^{ID = 50 A}
V_GS = 10 V
1.5
100000
V_GS = 0 V
1.4
10000
T_J = 150°C
1.3
1.2
1.1
1
1000
0.9
T_J = 100°C
0.8
0.7
−50 −25 0
25 50 75 100 125 150 175
100
2 6 10 14 18 22 26 30 34 38
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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