NST3946DP6T5G Datasheet, PDF (4/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor

NST3946DP6T5G
NPN TRANSISTOR
1.1
I_C/I_B = 10
1.0
0.9
−55°C
0.8
1.1
V_CE = 2.0 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.7
25°C
0.6
0.5
0.4 ^150°C
0.3
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.5
0.4 ^150°C
0.3
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
2.0
1.8
1.6
I_C = 100 mA
1.4
80 mA
1.2
1.0
0.8
0.6
0.4
20 mA
0.2
0
0.0001
60 mA
40 mA
0.001
I_b, BASE CURRENT (A)
Figure 5. Saturation Region
8.0
7.5
7.0
6.5
6.0
5.5
C_ib
5.0
4.5
4.0
3.5
0.01
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_eb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
3.0
2.5
2.0
1.5
C_ob
1.0
0.5
0
5.0
10
15
20
25
30
V_cb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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