NST3946DP6T5G Datasheet, PDF (1/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor

NST3946DP6T5G
Dual Complementary
General Purpose Transistor
The NST3946DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
http://onsemi.com
Features
• h_FE, 100−300
• Low V_CE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Symbol Value
Unit
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
NST3946DP6T5G*
*Q1 PNP
Q2 NPN
Collector −Emitter Voltage
V_CEO
40
Collector −Base Voltage
V_CBO
60
Emitter−Base Voltage
V_EBO
6.0
Collector Current − Continuous
I_C
200
Electrostatic Discharge
HBM ESD
2
MM Class
B
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Symbol Max
Vdc
Vdc
Vdc
mAdc
Unit
65 ⁴
12 ³
SOT−963
CASE 527AD
PLASTIC
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
P_D
240
mW
1.9
mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
R_qJA
P_D
R_qJA
Symbol
P_D
R_qJA
520
280
2.2
446
Max
350
2.8
357
°C/W
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
MG
G
1
L = Device Code
(180° Clockwise Rotation)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
P_D
420
mW
3.4
mW/°C
ORDERING INFORMATION
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
R_qJA
T_J, T_stg
297
−55 to
+150
°C/W
°C
Device
Package
Shipping^†
NST3946DP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 1
Publication Order Number:
NST3946DP6/D