NSS35200MR6T1G_13 Datasheet, PDF (4/6 Pages) ON Semiconductor – 35 V, 5 A, Low VCE(sat) PNP Transistor

NSS35200MR6T1G
1
I_C/I_B = 100
0.1
T_A = −55°C _{TA = 150°C}
T_A = 25°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
0.25
0.20
I_C/I_B = 50
0.15
0.10
0.05
100°C
25°C
−55°C
0
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1000
T_A = 150°C
T_A = 25°C
100 ^{TA = −55°C}
V_CE = 1.5 V
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain versus
Collector Current
1.1
1
0.9 T_A = −55°C
0.8
0.7
T_A = 25°C
0.6
0.5
0.4
T_A = 150°C
0.3
0.2
0.1
0
0.001
0.01
0.1
I_C/I_B = 100
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.2
1.1 ^{VCE = 3 V}
1
0.9 _{TA = −55°C}
0.8
0.7
0.6 ^{TA = 25°C}
0.5
0.4
0.3 ^{TA = 150°C}
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage
versus Collector Current
1000
100
10
0.1
C_ibo
C_obo
1
10
V_R, REVERSE VOLTAGE (V)
Figure 6. Capacitance
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