NSS35200MR6T1G_13 Datasheet, PDF (2/6 Pages) ON Semiconductor – 35 V, 5 A, Low VCE(sat) PNP Transistor

THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 X 1.0 inch Pad.
3. Refer to Figure 8.
NSS35200MR6T1G
Symbol
P_D (Note 1)
R_qJA (Note 1)
P_D (Note 2)
R_qJA (Note 2)
R_qJL
P_Dsingle
(Notes 2 & 3)
T_J, T_stg
Max
625
5.0
200
1.0
8.0
120
80
1.75
−55 to +150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
°C
http://onsemi.com
2