NSS1C200L Datasheet, PDF (4/6 Pages) ON Semiconductor – PNP Transistor

NSS1C200L, NSV1C200L
1.0
0.8
−55°C
25°C
0.6
150°C
0.4
1.00
T_J = 25°C
0.10
3A
2A
1A
0.5 A
0.2
0
0.001
0.01
0.1
V_CE = 2 V
1
10
I_C, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
I_C = 0.1 A
0.01
1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00
I_B, BASE CURRENT (A)
Figure 9. Collector Saturation Region
400
T_J = 25°C
f_TEST = 1 MHz
300
200
100
0
0
1
2
3
4
5
6
7
8
V_CE, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
80
70
T_J = 25°C
f_TEST = 1 MHz
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
140
T_J = 25°C
120 ^fTEST ^{= 1 MHz}
V_CE = 10 V
100
80
60
40
20
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
10
10 ms
1
1 ms
100 ms
Thermal Limit
0.1
0.01
0.1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13.
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