NSS1C200L Datasheet, PDF (2/6 Pages) ON Semiconductor – PNP Transistor

NSS1C200L, NSV1C200L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = −0.1 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = −0.1 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −140 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = −6.0 Vdc)
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
−100
−140
−7.0
−100
−50
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I_C = −10 mA, V_CE = −2.0 V)
(I_C = −500 mA, V_CE = −2.0 V)
(I_C = −1.0 A, V_CE = −2.0 V)
(I_C = −2.0 A, V_CE = −2.0 V)
h_FE
150
120
240
360
80
50
Collector −Emitter Saturation Voltage (Note 3)
(I_C = −0.1 A, I_B = −0.01 A)
(I_C = −0.5 A, I_B = −0.05 A)
(I_C = −1.0 A, I_B = −0.100 A)
(I_C = −2.0 A, I_B = −0.200 A)
V_CE(sat)
V
−0.040
−0.080
−0.115
−0.250
Base −Emitter Saturation Voltage (Note 3)
(I_C = −1.0 A, I_B = −0.100 A)
V_BE(sat)
V
−0.950
Base −Emitter Turn−on Voltage (Note 3)
(I_C = −1.0 A, V_CE = −2.0 V)
V_BE(on)
V
−0.850
Cutoff Frequency
(I_C = −100 mA, V_CE = −5.0 V, f = 100 MHz)
f_T
MHz
120
Input Capacitance (V_EB = 2.0 V, f = 1.0 MHz)
Cibo
200
pF
Output Capacitance (V_CB = 10 V, f = 1.0 MHz)
Cobo
22
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
0.60
0.50
Note 2
0.40
0.30
Note 1
0.20
0.10
0
0 20 40 60 80 100 120 140 160
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
www.onsemi.com
2