NSBA115TDP6 Datasheet, PDF (4/5 Pages) ON Semiconductor – Dual PNP Bias Resistor Transistors

NSBA115TDP6
TYPICAL CHARACTERISTICS
NSBA115TDP6
10
I_C/I_B = 10
1
25C
150C
0.1
1000
100
10
150C
25C
−55C
−55C
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
1
50
1
V_CE = 10 V
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
7
100
6
f = 10 kHz
I_E = 0 A
150C
10
25C
−55C
5
T_A = 25C
4
1
3
0.1
2
0.01
1
V_O = 5 V
0
0.001
0
10
20
30
40
50
0
4
8
12
16 20 24 28
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
−55C
10
25C
150C
1
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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