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| NSBA115TDP6 Datasheet, PDF (2/5 Pages) ON Semiconductor – Dual PNP Bias Resistor Transistors | |||
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NSBA115TDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
NSBA115TDP6 (SOTâ963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
NSBA115TDP6 (SOTâ963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FRâ4 @ 100 mm2, 1 oz. copper traces, still air.
2. FRâ4 @ 500 mm2, 1 oz. copper traces, still air.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
â55 to +150
Unit
MW
mW/ï°C
ï°C/W
MW
mW/ï°C
ï°C/W
ï°C
http://onsemi.com
2
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