NRVTS8120EMFS Datasheet, PDF (4/5 Pages) ON Semiconductor – Very Low Leakage Trench-based Schottky Rectifier

NRVTS8120EMFS
TYPICAL CHARACTERISTICS
7
I_PK/I_AV = 10 I_PK/I_AV = 5 Square Wave
6
I_PK/I_AV = 20
5
dc
4
3
2
1
0
01 2 3
4 5 6 7 8 9 10
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
10 ^20%
10%
5%
1 ^2%
1%
Assumes 25°C ambient and soldered to
a 600 mm² − oz copper pad on PCB
0.1
Single Pulse
0.01
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 8. Typical Thermal Characteristics, Junction−to−Ambient
100
1000
10
1 _{50% Duty Cycle}
20%
10%
0.1 5%
2%
1%
0.01 ^{Single Pulse}
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
1000
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