NRVTS8120EMFS Datasheet, PDF (3/5 Pages) ON Semiconductor – Very Low Leakage Trench-based Schottky Rectifier

100
T_A = 175°C
T_A = 150°C
10 ^TA ^{= 125°C}
T_A = 85°C
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NRVTS8120EMFS
TYPICAL CHARACTERISTICS
T_A = 25°C
100
T_A = 175°C
T_A = 150°C
10 ^{TA = 125°C}
T_A = 85°C
1
T_A = 25°C
0.1
0
T_A = −55°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
T_A = −55°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
T_A = 175°C
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
T_A = 175°C
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
1.E−07
1.E−06
10 20 30 40 50 60 70 80 90 100 110 120
10 20 30 40 50 60 70 80 90 100 110 120
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
T_J = 25°C
10
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
16
14
DC
12
R_qJC = 2.7°C/W
10
Square Wave
8
6
4
2
0
120 125 130 135 140 145 150 155 160 165 170 175
T_C, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Device
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