NRVTS1260EMFS Datasheet, PDF (4/5 Pages) ON Semiconductor – Exceptionally Low Leakage Trench-based Schottky Rectifier

NRVTS1260EMFS
TYPICAL CHARACTERISTICS
26
24 ^IPK/IAV
22 ^{= 20}
20
18
16
14
12
10
8
6
4
2
0
01 2 3
I_PK/I_AV = 10
I_PK/I_AV = 5
Square Wave
dc
4 5 6 7 8 9 10 11 12
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% (DUTY CYCLE)
20%
10
10%
5.0%
1 ^2.0%
1.0%
0.1
Assumes 25°C ambient and soldered to
a 600 mm² − oz copper pad on PCB
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 8. Typical Thermal Characteristics
100
1000
10
1 _{50% (DUTY CYCLE)}
20%
10%
0.1 5.0%
2.0%
1.0%
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (s)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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