NRVTS1260EMFS Datasheet, PDF (3/5 Pages) ON Semiconductor – Exceptionally Low Leakage Trench-based Schottky Rectifier

NRVTS1260EMFS
TYPICAL CHARACTERISTICS
100
T_A = 150°C
10
T_A = 125°C
1
T_A = 175°C
T_A = 25°C
100
T_A = 150°C
10
T_A = 125°C
1
T_A = 175°C
T_A = 25°C
0.1
0
T_A = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.1
0
T_A = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
T_A = 175°C
T_A = 150°C
T_A = 125°C
1.E+00
1.E−01
1.E−02
1.E−03
T_A = 175°C
T_A = 150°C
T_A = 125°C
1.E−05
1.E−06
T_A = 25°C
1.E−04
1.E−05
T_A = 25°C
1.E−07
5 10 15 20 25 30 35 40 45 50 55 60
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−06
5 10 15 20 25 30 35 40 45 50 55 60
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1000
T_J = 25°C
100
0.1
1
10
V_R, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
24
22
20
18
16
14
12
10
8
6
4
2
0
0
DC
Square Wave
R_qJC = 2.0°C/W
20 40 60 80 100 120 140 160 175
T_C, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Device
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