NRVBB4030T4G Datasheet, PDF (4/6 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

MBRB4030G, NRVBB4030T4G
ELECTRICAL CHARACTERISTICS
70
DC
60
 (RESISTIVE LOAD)
50 _{SQUARE WAVE}
40
I_{PK = 5.0 (CAPACITIVE}
I_AV
LOAD)
30
20
10
10
20
0
100
110
120
130
140
150
T_C, CASE TEMPERATURE (C)
Figure 6. Current Derating, Infinite Heatsink
20
DC
SQUARE WAVE
15 _
(RESISTIVE LOAD)
10
10
5
20
R_qJA = 25C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
I_{PK = 5.0 (CAPACITIVE}
I_AV
LOAD)
0
50
100
150
T_A, AMBIENT TEMPERATURE (C)
Figure 7. Current Derating
12
50
R_qJA = 50C/W
T_J = 150C
DC
10
 (RESISTIVE LOAD)
8
SQUARE WAVE
 (RESISTIVE LOAD)
40
I_{PK = 5.0 (CAPACITIVE}
I_AV
LOAD)
SQUARE WAVE
30
6
I_{PK = 5.0 (CAPACITIVE}
I_AV
LOAD)
10
20
4
10
20
DC
2
20
10
0
0
0
50
100
150
0 10 20 30 40 50 60 70 80
T_A, AMBIENT TEMPERATURE (C)
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
1.0
SINGLE PULSE
0.1
0.01
0.1
t_p
P_pk
P_pk
DUTY CYCLE, D = t_p/t₁
PEAK POWER, P_pk, is peak of an
TIME ^{equivalent square power pulse.}
t₁
DT_JL = P_pk  R_qJL [D + (1 - D)  r(t₁ + t_p) + r(t_p) - r(t₁)]
where
DT_JL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) = r(t₁ + t_p) = normalized value of transient thermal resistance at time, t₁ + t_p.
1.0
10
t, TIME (ms)
100
1000
Figure 10. Thermal Response
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