NRVB140SFT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBR140SF, NRVB140SF
1000
100
T_J = 25°C
10
0
5 10 15 20 25 30 35 40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
125
115
105
324.9°C/W
95
R_qJA = 25.6°C/W
130°C/W
85
235°C/W
75
65
55
0
5 10 15 20 25 30 35 40
V_R, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T_J therefore must include forward and reverse power effects. The allowable operating
T_J may be calculated from the equation:
T_J = T_Jmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T_J due to reverse bias under DC conditions only and is calculated as T_J = T_Jmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100
0.2
0.1
0.05
10
0.01
1
SINGLE PULSE
0.1
0.000001 0.00001
0.0001
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Test Type > Min Pad < Die Size 38x38 @ 75% mils
qJA = 321.8 °C/W
0.001
0.01
0.1
1
t₁, TIME (sec)
Figure 9. Thermal Response
10
100
1000
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