NRVB140SFT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBR140SF, NRVB140SF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated V_R, T_L = 112°C)
Peak Repetitive Forward Current
(At Rated V_R, Square Wave, 100 kHz, T_L = 95°C)
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
V_RRM
40
V
V_RWM
V_R
I_O
1.0
A
I_FRM
A
2.0
I_FSM
A
30
Storage Temperature
T_stg
−55 to 150
°C
Operating Junction Temperature
T_J
−55 to 125
°C
Voltage Rate of Change (Rated V_R, T_J = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm²).
Symbol
R_tjl
R_tjl
R_tja
R_tja
Value
26
21
325
82
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
(I_F = 0.1 A)
(I_F = 1.0 A)
(I_F = 3.0 A)
V_F
T_J = 25°C
T_J = 85°C
V
0.36
0.30
0.55
0.515
0.85
0.88
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(V_R = 40 V)
(V_R = 20 V)
I_R
T_J = 25°C
T_J = 85°C
mA
0.5
25
0.15
18
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2