NB7L86M Datasheet, PDF (4/12 Pages) ON Semiconductor – 2.5V/3.3V 12 Gb/s Differential Clock/Data SmartGate with CML Output and Internal Termination

NB7L86M
VTD0
D0
50 W
D0
VTD0
50 W
Q
50 W
Q
VTD1
D1
D1
VTD1
50 W
50 W 50 W
Table 5. 2:1 MUX TRUTH TABLE (Note 6)
SEL
Q
1
D1
0
D0
6. D0, D1, SEL are complementary of D0, D1, SEL
unless specified otherwise.
VTSEL
SEL
SEL
Figure 6. Configuration for 2:1 MUX Function
Table 6. ATTRIBUTES
Characteristics
Value
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 1500 V
> 50 V
> 500 V
Moisture Sensitivity (Note 7)
Pb Pkg
Pb−Free Pkg
QFN−16
Level 1
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
400
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
7. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
Table 7. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
V_CC
V_I
V_INPP
Positive Power Supply
Input Voltage
Differential Input Voltage |D − D|
I_IN
Input Current Through R_T (50 W Resistor)
V_EE = 0 V
V_EE = 0 V
V_CC − V_EE ≥
V_CC − V_EE <
Continuous
Surge
2.8 V
2.8 V
V_EE ≤ V_I ≤ V_CC
3.6
V
3.6
V
2.8
V
|V_CC − V_EE|
V
25
mA
50
mA
I_out
Output Current
Continuous
Surge
25
mA
50
mA
T_A
Operating Temperature Range
QFN−16
T_stg
Storage Temperature Range
q_JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
(Note 8)
500 lfpm
QFN−16
QFN−16
−40 to +85
−65 to +150
42
36
°C
°C
°C/W
°C/W
q_JC
Thermal Resistance (Junction−to−Case)
2S2P (Note 8)
T_sol
Wave Solder
Pb
Pb−Free
QFN−16
3 to 4
265
265
°C/W
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
8. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
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