MUN5330DW1 Datasheet, PDF (4/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

10
I_C/I_B = 10
1
MUN5330DW1, NSBC113EPDXV6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5330DW1, NSBC113EPDXV6
100
V_CE = 10 V
10
25°C
150°C
−55°C
25°C
150°C
0.1
1
−55°C
0.01
0.1
0
10
20
30
40
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
Figure 3. DC Current Gain
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
100
f = 10 kHz
I_E = 0 A
T_A = 25°C
10
150°C
25°C −55°C
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
1
V_O = 5 V
0.1
50
0
0.5
1.0
1.5
2.0
2.5
3.0
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
150°C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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