MUN5330DW1 Datasheet, PDF (2/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5330DW1, NSBC113EPDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5330DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
P_D
T_A = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
MUN5330DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P_D
T_A = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
(Note 1)
R_qJA
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
R_qJL
Junction and Storage Temperature Range
NSBC113EPDXV6 (SOT−563) ONE JUNCTION HEATED
T_J, T_stg
Total Device Dissipation
P_D
T_A = 25°C
(Note 1)
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
NSBC113EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P_D
T_A = 25°C
(Note 1)
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
Junction and Storage Temperature Range
T_J, T_stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
357
2.9
350
500
4.0
250
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
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